1300nm量子点激光器芯片

1300nm量子点激光器芯片
1300 nm 量子点FP激光器芯片可以用于电信,数据中心和硅光子技术宽带光源。量子点技术是作用于器件的有源层,芯片功耗低,有非常优异的温度特性和高输出功率特性。

特性:

  • 1300nm FP-LD 芯片
  • 非常宽带 工作温度范围: -40 to 95 C
  • 量子点有源层有非常好的温度稳定性
  • 典型型号:QLF131J-HA

应用

  • 光通信
  • 硅光子宽带光源

技术规格-额定参数

PARAMETER SYMBOL RATING UNIT
Output power PO 30 mW
LD forward current IF 200 mA
LD reverse voltage VRLD 2 V
Operating temperature Tc -40 to 95 °C
Storage temperature Tstg -40 to 85 °C
Soldering Temperature (<1.5s) Tsld 390 C

技术规格-光学参数和电学参数

Parameter Symbol Test condition Min. Typ. Max. Unit
Threshold current Ith CW 25°C - 8 - mA
95°C - 10 20
Output power Po CW
Iop = 80 mA
25°C - 30 - mW
95°C 10 18 -
Operating current Iop CW
Po = 10 mW
25°C - 35 - mA
95°C - 42 60
Operating voltage Vop CW
Po = 10 mW
25°C - 1.3 1.7 V
95°C - 1.3 1.6
Center wavelength c CW
Po = 10 mW
25°C - 1305 - nm
95°C - 1337 - nm
RMS spectral width  CW
Po = 10 mW
25, 95°C - 3.0 5.0 nm
FWHM of far field pattern (Horizontal) h CW
Po = 10 mW
25, 95°C 10 18 23 deg.
FWHM of far field pattern (Vertical) v CW
Po = 10 mW
25, 95°C 30 44 50 deg.

量子点晶圆规格

量子点芯片提供从晶圆到芯片的多形态产品,满足客户的需求。

Item Quantity Test condition, specification Go/No criteria
Die bonding (DB) and wire bondign (WB) check 1pc/wafer DB shear strength > 0.96 N WB pull strength > 0.03 N 100%

Burn-in

10pcs/wafer
TO-CAN
100°C, 120 mA ACC, 12 hrs
Ith < 10%

>= 70%
CW characteristics 10pcs/wafer TO-CAN
Based on Table 6-2
>= 70%

Table 6-2

Parameter Symbol Test condition Min. Typ. Max. Unit

Threshold current

Ith

CW
-40°C - 10 20
mA
25°C - 8 15
95°C - 10 20

Output power

Po

CW
Iop = 80 mA
-40°C 20 30 -
mW
25°C 20 30 -
95°C 10 18 -

Operating current

Iop

CW
Po = 10 mW
-40°C - 40 50
mA
25°C - 35 40
95°C - 42 60

Operating voltage

Vop

CW
Po = 10 mW
-40°C - 1.6 2.0
V
25°C - 1.3 1.7
95°C - 1.3 1.6

芯片外形图:

1300nm量子点激光器芯片